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    TXRF310Fab

    High-speed metal contamination mapping for up to 300 mm wafers

    Measurement of trace elemental surface contamination

    Total reflection X-ray fluorescence (TXRF) analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 310Fab can measure elements from Na through U with a single-target, 3-beam X-ray system and a liquid nitrogen-free detector system.

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    TXRF310Fab Overview

    The TXRF 310Fab includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. These contribute to higher throughput, accuracy and precision, and easy routine operation.

    Optional Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.

    Detection limit of typical elements (LLD)

    Detection limit LLD (E10 atoms/cm²) Na Al Fe Ni Cu
    25 25 0.1 0.1 0.15

    Options

    • ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.
    • BAC-TXRF capability enables fully-automated front-side and back-side TXRF measurements of 300 mm wafers with non-contacting wafer flipping.

    TXRF310Fab Features

    Quick contamination inspection for semiconductor processes
    Accepts 300 mm, 200 mm, and 150 mm wafers
    Wide range of analytical elements (Na~U)
    Light-element sensitivity (for Na, Mg, and Al)
    Single target 3-beam method and XYθ stage are unique to Rigaku, enabling highly accurate ultra trace analysis over the entire wafer surface
    Import measurement coordinates from defect inspection tools for follow-up analysis
    FOUP, SMIF, and through-the-wall configurations are available to meet the various needs of high-volume manufacturing wafer fabs

    TXRF310Fab Specifications

    Technique Total reflection X-ray fluorescence (TXRF)
    Benefit Rapid, non-destructive measurement of trace elemental surface contamination (Na – U)
    Technology Three-beam TXRF system with electronically-cooled detector, and automatic optics exchange 
    Attributes Three-detector configuration
    High-power W-anode X-ray source (9 kW rotating anode)
    Three excitation energies optimized for light, transition, and heavy elements
    XYθ sample stage
    Dual FOUP load ports
    Features Full wafer mapping (SWEEPING-TXRF)
    Zero edge exclusion (ZEE-TXRF)
    Options FOUP, SMIF, and through-the-wall configurations
    Backside analysis (BAC-TXRF)
    GEM300 software, E84/OHT support
    Dimensions 1200 (W) x 2050(H) x 2546 (D) mm
    Measurement results Quantitative result, spectrum chart, color contour map, mapping table

    TXRF310Fab Application Notes

    The following application notes are relevant to this product

    TXRF310Fab Resources

    Webinars

    Total Reflection X-ray Fluorescence (TXRF) for Semiconductor Manufacturing Watch the Recording

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