TXRF-310 applications

TXRF-310 applications

  • Determination of the contaminant element spatial distribution (wafer mapping)
    • Contamination on a 300 mm wafer surface measured in 45 min
    • Contamination distribution is seen at a glance by individual element maps and overlapping element views
    • Average contamination is calculated over the entire wafer surface
    • High-precision measurements can be carried out automatically on contaminated spots found by whole-wafer surface screening
  • For routine analysis on particular points: Direct-TXRF of designated coordinates
    • Correct contamination levels are reported at all points on a wafer by avoiding diffraction interference
    • Detection of transition metals at the 10⁹ atoms/ cm² level is possible (500 sec measurement)
    • Using a high-power rotating-anode X-ray source, three-times higher throughput is achieved compared with a sealed-tube source
    • Light elements, transition metals, and heavy elements are measured seamlessly without switching between multiple X-ray tubes