EUV optics
Features
- Optimized multilayer optical design for highest performance available
- High Reflectivity ≥65% at 13.5nm typical (substrate dependent)
- d-spacing profile precision ± 0.05 Å rms
- sizes: linear 1.5 m x 0.5 m, diameters up to 450 mm
- Standard Production Materials: Mo/Si, La/B, La/B₄C, Ru/B₄C, Mo/B4C, W/C, Cr/C, Cr/Sc, Al₂O₃/B₄C, SiC/Si, Si/C, SiC/C, and more
Multilayer optics for extreme ultraviolet lithography
High efficiency multilayer optics for 13.5 nm, 6.x nm wavelengths
Specifications
Product name | EUV optics |
Technique | Extreme ultraviolet lithography |
Benefit | High efficiency multilayer optics |
Technology | Multilayer optics |
Core attributes | High reflectivity ≥65% at 13.5nm typical |
Core options | Standard Production Materials: Mo/Si, La/B, La/B₄C, Ru/B₄C, Mo/B4C, W/C, Cr/C, Cr/Sc, Al₂O₃/B₄C, SiC/Si, Si/C, SiC/C... |
Computer | N/A |
Core dimensions | Varies with configuration |
Mass (core unit) | Varies with configuration |
Power requirements | N/A |