In recent years, group-III nitride materials, especially GaN, have been attracting attention, and the development of light-emitting devices (ultraviolet to blue) and power devices has been underway. The properties of these devices are related to the crystal quality of the grown films. One technique for evaluating crystal quality is the X-ray rocking curve method. In this example, we evaluated the tilt width (tilt distribution of the crystallographic axis in the growth direction) and twist width (in-plane rotation distribution of the crystallographic axis parallel to the sample surface) of a GaN film grown on a sapphire substrate using the rocking curve method.
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