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Evaluation of residual stress of thin films by GI-XRD and the multiple hkl method

AppNote B-XRD3005: Evaluation of residual stress of thin films by GI-XRD and the multiple hkl method

Background

Residual stress of thin films has been reported as a cause of cracks and partial expansion of these films, as well as peeling of the films and/or deformation of the substrate, depending on the adhesion strength between the thin film and the substrate. Residual stress X-ray diffraction is one of the methods for evaluating residual stress with high accuracy. The method is, however, difficult to apply to thin films because the X-rays only penetrate the sample surface to a depth of several μm ~ several tens μm, generating insufficient intensity to analyze the X-ray diffraction (XRD) profile. We herein illustrate an example where residual stress of a thin film is evaluated by grazing incidence X-ray diffraction (GI-XRD) for efficiently creating the XRD profile by the multiple hkl method, which uses different Miller indices.

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