General features of GaN-related materials
In modern society where our daily environment is supported by various electronic devices, it is critical to pursue opto-electronic or power-electronic devices with less environment...
In modern society where our daily environment is supported by various electronic devices, it is critical to pursue opto-electronic or power-electronic devices with less environment...
Although high-resolution X-ray diffraction (HR-XRD) has been commonly employed for the crystallinity characterization of GaN-related materials, special care is required due to the complexities resulting...
High-voltage and high-efficiency power devices are in strong demand as a way of decreasing energy consumption in a wide range of industrial and consumer products...
TXRF spectrometers are widely used as evaluation instruments for measuring contamination in the semiconductor fabrication process. This is mainly because the TXRF technique allows non-destructive...
Due to the recent development of fundamental technologies of X-ray generators and detectors, such as X-ray focusing optics and area detectors, the size of the...
Total reflection X-ray fluorescence (TXRF) spectrometry is widely used in semiconductor manufacturing processes for nondestructive analyses of metallic contamination on wafer surfaces. Sensitivity requirements for...
One of the major technical challenges of this decade are energy efficient technologies, which is among others, comparable in its importance to Artificial Intelligence, 5G...
Abstract
Rigaku launched a high-speed X-ray topography system with the improved throughput of 10–20 wafers/hour (3–6 min/wafer). High-speed image acquisition is achieved using an uncollimated...