You are here

Home › Product lines › Semiconductor metrology › Surface contamination metrology

Surface contamination metrology

Measure elemental contamination at discrete points or with full wafer maps

TXRF 3760

TXRF analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 3760 can measure elements from Na through U with a single-target, 3-beam X-ray system and a liquid nitrogen-free detector system.

The TXRF 3760 includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. All of these contribute to higher throughput, higher accuracy and precision, and easy routine operation.

Optional Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.

Optional ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.

TXRF 3760

Features

  • Ease of operation and rapid analysis results
  • Accepts 200 mm and smaller wafers
  • Compact design, footprint
  • High-power rotating-anode source
  • Wide range of analytical elements (Na~U)
  • Light-element sensitivity (for Na, Mg, and Al)
  • Application to bare Si and to non-Si substrates
  • Import measurement coordinates from defect inspection tools for follow-up analysis

TXRF 3760 specifications

  • Size of wafer: 200 mm max.
  • Rotating-anode X-ray source
  • Sample stage: XY θ stage
  • Liquid nitrogen-free detector
  • Oil-free electrical transformer
  • Three-beam excitation
  • Automatic optics alignment
  • Data import from external surface defect inspection tool

TXRF 3760 accessories

  • SECS/GEM communication software
  • SP-TXRF capability enables mapping of the entire wafer surface
  • ZEE-TXRF capability enables measurements to zero edge exclusion

TXRF 3760 applications

The application of TXRF analysis is not limited to the analysis of metallic contamination on bare silicon wafers. TXRF analysis can be used to gauge the cleanliness of all fab processes, including cleaning, lithography, etching, ashing, films, etc. Beyond silicon devices, TXRF is also applicable to the fields of compound semiconductor devices, MEMS, organic electroluminescent materials, etc.

  • bare wafer
  • filmed wafer
  • patterned wafer
  • VPD-processed wafer
  • glass wafer
  • GaAs / SiC / sapphire

Product(s):

(Hold down CTRL key
to select multiple items)
Name (first/last):
Company:
E-mail:
Phone: Ext:
Street address:
City:
State/Province/Region: (use two-letter abbreviations for US)
Zip/Postal Code:
Country:
Additional comments
 (no URLs allowed)

 
Occasionally we would like to send you news, updates, and special promotions about our products and services. By checking the “I Agree” box and submitting your email address, you are giving us your express consent to send you these types of emails and you are also agreeing to Our Privacy Notice. (click Our Privacy Notice link to review it) and Our Terms & Conditions. (click Our Terms link to review it) I agree

Visit our
new web portal
XRR tools arrow
arrowMFM310
XRF tools arrow
arrowAZX 400
arrowWaferX 310
arrowWDA-3650
TXRF tools arrow
arrowTXRF-V310
arrowTXRF-V450
arrowTXRF 310Fab
arrowTXRF-450
arrowTXRF 3760
arrowTXRF 3800e

In the spotlight

HyPix-3000
HyPix-3000
HyPix-3000 is a next-generation two-dimensional semiconductor hybrid pixel array detector (HPAD), pixel size of 100 um², designed specifically to meet the needs of the home lab diffractionist.
>> See more
Copyright © 2019 — Rigaku Corporation and its Global Subsidiaries. All Rights Reserved.