Surface contamination metrology

Measure elemental contamination at discrete points or with full wafer maps

TXRF 3800e

TXRF analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 3800e can measure elements from S through U with a single-target, dual-beam X-ray system and a new liquid nitrogen-free detector system.

The TXRF 3800e includes Rigaku's patent pending X-Y-θ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. All of these contribute to higher throughput, higher accuracy and precision, and easy routine operation.

Optional Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" — out to zero edge exclusion.

All of these features are housed in a new, compact, and efficient design. Access for all maintenance work is through the front and rear panels, so other cleanroom equipment may be placed next to the TXRF 3800e. This represents a large savings in expensive cleanroom space.

TXRF 3800e


  • Ease of operation and rapid analysis results
  • Accepts 200 mm and smaller wafers
  • Low cost of ownership
  • Compact design, footprint
  • Sealed X-ray tube source
  • Wide range of analytical elements (S~U)
  • Application to bare Si and to non-Si substrates
  • Zero edge exclusion (ZEE-TXRF) measurement capability
  • Import measurement coordinates from defect inspection tools for follow-up analysis

TXRF 3800e specifications

  • Size of wafer: 200 mm max.
  • Sealed X-ray tube source
  • Sample stage: XY θ stage
  • Liquid nitrogen-free detector
  • Oil-free electrical transformer
  • Dual-beam excitation
  • Automatic optics alignment
  • Zero edge exclusion (ZEE-TXRF) measurement capability
  • Data import from external surface defect inspection tool

TXRF 3800e accessories

  • SECS/GEM communication software
  • SP-TXRF capability enables mapping of the entire wafer surface

TXRF 3800e applications

The application of TXRF analysis is not limited to the analysis of metallic contamination on bare silicon wafers. TXRF analysis can be used to gauge the cleanliness of all fab processes, including cleaning, lithography, etching, ashing, films, etc. Beyond silicon devices, TXRF is also applicable to the fields of compound semiconductor devices, MEMS, organic electroluminescent materials, etc.

  • bare wafer
  • filmed wafer
  • patterned wafer
  • VPD-processed wafer
  • glass wafer
  • GaAs / SiC / sapphire


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