Thin film analysis

XRD for epitaxial lattice parameter measurements

X-ray diffraction is especially valuable to the study of epitaxial layers and other thin film materials. Using precision lattice parameter measurement methods, the lattice mis-match of an epitaxial layer and its substrate can be determined with great precision. This lattice parameter match or mismatch is an important factor in epitaxial devices such as magnetic garnet films for bubble memories, doped gallium arsenide films for LED and high-speed transistors, infra-red detectors and other important electronic products. Another interesting use of XRD for thin films is that the coefficient of thermal expansion can be determined by plotting lattice parameters versus temperature using a high temperature diffractometer.


Advanced state-of-the-art high-resolution XRD system powered by Guidance expert system software
    Ultima IV
High-performance, multi-purpose XRD system for applications ranging from R&D to quality control
World's most powerful θ/θ high-resolution X-ray diffractometer features an in-plane diffraction arm
Process XRR, XRF, and XRD metrology tool for patterned wafers; up to 300 mm wafers
    WaferX 300
In-line, simultaneous WDXRF spectrometer for wafer metal film metrology; up to 300 mm wafers

Thin film publications based on Rigaku instruments
This pdf document contains Rigaku publications on the following topics:
  • In-Plane Diffraction
  • X-Ray Reflectivity (XRR)
  • Epitaxial Film Characterization
  • Small Angle X-ray Scattering (SAXS)
  • Miscellaneous