In-plane anisotropic substrates such as m-plane sapphire, Si 110, patterned wafers are used as substrates to grow epitaxial films with specific crystallographic orientations. For these samples, it is important to evaluate crystal orientation and crystallinity of the epitaxial film with respect to the orientation of the substrate. Wide-range reciprocal space mapping (RSM), which provides diffraction intensity distribution in a wide range of reciprocal space, helps to understand the entire image of the crystal orientation and crystallinity of epitaxial films.
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