TXRF310Fab
Features
- Quick contamination inspection for semiconductor processes
- Accepts 300 mm, 200 mm, and 150 mm wafers
- Wide range of analytical elements (Na~U)
- Light-element sensitivity (for Na, Mg, and Al)
- Single target 3-beam method and XYθ stage are unique to Rigaku, enabling highly accurate ultra trace analysis over the entire wafer surface
- Import measurement coordinates from defect inspection tools for follow-up analysis
- FOUP, SMIF, and through-the-wall configurations are available to meet the various needs of high-volume manufacturing wafer fabs
Wafer surface contamination metrology by TXRF
Measurement of trace elemental surface contamination
Specifications
Product name | TXRF 310Fab |
Technique | Total reflection X-ray fluorescence (TXRF) |
Benefit | Measurement of trace elemental surface contamination |
Technology | Three-beam excitation and automatic optics alignment |
Core attributes | Rotating-anode X-ray source, XYθ sample stage , liquid nitrogen-free detector, accepts 300 mm, 200 mm, and 150 mm wafers |
Core options | GEM-300 automation software for full factory automation, SP-TXRF capability enables mapping of the entire wafer surface, ZEE-TXRF capability enables measurements to zero edge exclusion, BAC-TXRF capability enables fully-automated front-side and back-side measurements |
Computer | Internal PC, MS Windows® OS |
Core dimensions | 1200 (W) x 2050(H) x 2546 (D) mm |
Mass | 1380 kg (core unit) |
Power requirements | 3Ø, 200 VAC 50/60 Hz, 30 A |