- Ease of operation and rapid analysis results
- Accepts 200 mm and smaller wafers
- Compact design, footprint
- High-power rotating-anode source
- Wide range of analytical elements (Na~U)
- Light-element sensitivity (for Na, Mg, and Al)
- Application to bare Si and to non-Si substrates
- Import measurement coordinates from defect inspection tools for follow-up analysis
Surface contamination metrology
Measure elemental contamination at discrete points or with full wafer maps
TXRF analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 3760 can measure elements from Na through U with a single-target, 3-beam X-ray system and a liquid nitrogen-free detector system.
The TXRF 3760 includes Rigaku's patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly windows software. All of these contribute to higher throughput, higher accuracy and precision, and easy routine operation.
Optional Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision. Optional ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.
|Total reflection X-ray fluorescence (TXRF)
|Rapid elemental analysis, of Na to U, to gauge wafer contamination in all fab processes
|3-beam TXRF system with liquid nitrogen-free detector
|Up to 200 mm wafers, XYθ sample stage system, in-vacuum wafer robotic transfer system, ECS/GEM communication software
|Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify "hot spots." ZEE-TXRF capability enabling measurements to be made with zero edge exclusion
|Internal PC, MS Windows® OS
|1000 (W) x 1760 (H) x 948 (D) mm
|100 kg (core unit)
|3Ø, 200 VAC 50/60 Hz, 100 A