WaferX 310
Features
- Simultaneous evaluation of film thickness and composition
- Applicable to all film types
- Accepts 300 mm, 200 mm, and 150 mm wafers
- Capable of high analytical performance, accuracy, and stability
- Patented "diffraction avoidance" capability for accurate XRF results
- High-sensitivity Boron analysis (with AD-Boron channel)
- Solid-state, oil-free x-ray generator
- FOUP, SMIF, and through-the-wall configurations are available to meet the various needs of high-volume manufacturing wafer fabs
In-line, simultaneous WDXRF spectrometer
Film thickness and composition measurements on blanket wafers
Specifications
Product name | WaferX 310 |
Technique | Simultaneous wavelength dispersive X-ray fluorescence |
Benefit | Thickness and composition of multi-layer stacks for 300 mm, 200 mm, and 150 mm wafers |
Technology | 4kW, Rh-anode, process WDXRF with factory automation |
Core attributes | 21 channels max., fixed type (₄Be ~₉₂U), scanning type (₂₂Ti ~₉₂U), CE marked, GEM-300, SEMI S2/S8 |
Core options | Available with 300 mm factory automation, 2 available FOUP (SMIF) load ports, AD-Boron channel |
Computer | Internal PC, MS Windows® OS |
Core dimensions | 1200 (W) x 1950 (H) x 2498 (D) mm |
Mass | 1166 kg (core unit) |
Power requirements | 3Ø, 200 VAC 50/60 Hz, 50 A |