XRTmicron

    X-ray Topography Imaging System

    For non-destructive evaluation of single-crystalline materials

    Rigaku XRTmicron is a fast, high-resolution laboratory X-ray topography system for non-destructive dislocation imaging. Various types of dislocations and non-uniformity within single crystal wafers (such as Si, SiC, GaN, Ge, GaAs, quartz, sapphire, rutile, calcium fluoride etc.) can be imaged across wafers up to 300 mm in diameter. X-ray topography is a widely used dislocation analysis technique for both research and development and process control by various single crystal, wafer and device manufacturers.

    XRTmicron Overview

    Topography engineered for performance

    Unmatched scan speed ten times higher compared to that of conventional systems is achieved by combining a high-brilliance dual-wavelengths X-ray source, the MicroMax-007 DW, and X-ray mirrors optimized for the topography application. Both Cu and Mo X-ray anodes and their mirrors are simultaneously mounted on the system and switched on-demand to perform reflection and transmission measurements without any system reconfiguration. A digital image of dislocations is captured by a either a high resolution (5.4 μm pixels) or ultra-high resolution (2.4 μm pixels) CCD camera. Both cameras can be simultaneously mounted on the system and switched on-demand depending on the required resolution.

    Fully automated X-ray topography

    Engineered for usability, the entire data image collection process—including anode switch, detector switch, optics switch and alignment, sample alignment and image collection—is fully automated. Furthermore, the system can be combined with a wafer loader and image recognition based dislocation counting software. Customized recipes can be built to automate the entire process from loading a wafer to reporting dislocation densities.

    XRTmicron Features

    High-brilliance dual-wavelength X-ray source: MicroMax-007 DW
    High-resolution CCD camera: XTOP (5.4 μm pixels)
    Ultrahigh-resolution CCD camera: HR-XTOP (2.4 μm pixels)
    Horizontal sample mount for minimum artificial strain to wafers
    Automatic wafer curvature correction for best dislocation image quality
    Automated system operation including X-ray anode switch, detector switch, optics switch and alignment, sample alignment, and image collection
    Automated dislocation analysis
    3, 4, 6, 8, 12 inch wafers supported
    Wafer loader compatible

    XRTmicron Specifications

    Technique X-ray topography
    Benefit Non-destructive evaluation of single-crystalline materials
    Technology Imaging using X-rays
    Attributes High-flux multi-target X-ray source, CCD imager
    Options XTOP or HR-XTOP CCD
    Computer External PC, MS Windows OS
    Dimensions 1800 (W) x 1800 (H) x 1870 (D) (mm)
    Mass 2200 kg (core unit)
    Power requirements 3Ø, 200 V, 15 A

    XRTmicron Resources

    Webinars

    Investigating Crystalline Defects of Semiconductors Using X-ray Topography Watch the Recording

    Rigaku Journal articles

    adobeCrystal defects in SiC wafers and a new X-ray topography system Read the Article
    adobeHigh-throughput, high-resolution X-ray topography imaging system: XRTmicron Read the Article
    adobeAutomated dislocation evaluation software for X-ray topography images: Topography Analysis Read the Article
    adobeDefect structure analysis in single crystal substrates using XRTmicron Read the Article
    adobeNon-destructive characterization of crystallographic defects of SiC substrates using X-ray topography for R&D and quality assurance in production Read the Article
    adobeDramatic improvement in the throughput of X-ray topography Read the Article

    Publications

    adobeGrowth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes Read the Article
    adobeSteady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal Read the Article
    adobeCrystalline quality distributions of the type IIa diamond substrate and the CVD diamond layer processed by chemical mechanical polishing using a SiO₂ wheel Read the Article
    adobeX-ray characterization of physical-vapor-transportgrown bulk AlN single crystals Read the Article
    adobeTransmission behavior of dislocations against Σ3 twin boundaries in Si Read the Article
    adobePopulations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography Read the Article

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