Application Note B-XRD2034: 通过摇摆曲线测量 评估III-V 族氮化物薄膜的扭曲幅度
导言
作为对环境影响小的紫外线源,深紫外LED有望取代汞灯。近年来特别是其杀菌功能受到了极大的关注,有望早日普及使用。为了提高发光效率和延长使用寿命,需要提高AlGaN发光层基层AlN层的质量。本测量示例中,研究了面内旋转方向上晶体取向分布(扭曲幅度)的评估方法,该方法被用作AlN层的贯通刃型位错密度的指标。
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