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High speed RSM of an epitaxial film by 1D detection mode

AppNote XRD2021: High speed RSM of an epitaxial film by 1D detection mode

 

Transistors using silicon germanium (SiGe) have low power consumption and operate at high speed. The device performance is affected by the Ge concentration, lattice strain (relaxation), and crystal quality of the SiGe layer. The reciprocal space mapping using a one-dimensional detector efficiently revealed these characteristics in a short time.

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