Transistors using silicon germanium (SiGe) have low power consumption and operate at high speed. The device performance is affected by the Ge concentration, lattice strain (relaxation), and crystal quality of the SiGe layer. The reciprocal space mapping using a one-dimensional detector efficiently revealed these characteristics in a short time.
Advanced state-of-the-art high-resolution XRD system powered by Guidance expert system software
Highly versatile multipurpose X-ray diffractometer with built-in intelligent guidance
New 6th-generation general purpose benchtop XRD system for phase i.d and phase quantification
Compact X-ray diffractometer for quality control of materials that is easy to use and is ideal for routine work
Laboratory micro-spot XRD residual stress analysis with both iso- and side-inclination methods
Windows®-based software suite for Rigaku's X-ray diffractometers